翻訳と辞書
Words near each other
・ "O" Is for Outlaw
・ "O"-Jung.Ban.Hap.
・ "Ode-to-Napoleon" hexachord
・ "Oh Yeah!" Live
・ "Our Contemporary" regional art exhibition (Leningrad, 1975)
・ "P" Is for Peril
・ "Pimpernel" Smith
・ "Polish death camp" controversy
・ "Pro knigi" ("About books")
・ "Prosopa" Greek Television Awards
・ "Pussy Cats" Starring the Walkmen
・ "Q" Is for Quarry
・ "R" Is for Ricochet
・ "R" The King (2016 film)
・ "Rags" Ragland
・ ! (album)
・ ! (disambiguation)
・ !!
・ !!!
・ !!! (album)
・ !!Destroy-Oh-Boy!!
・ !Action Pact!
・ !Arriba! La Pachanga
・ !Hero
・ !Hero (album)
・ !Kung language
・ !Oka Tokat
・ !PAUS3
・ !T.O.O.H.!
・ !Women Art Revolution


Dictionary Lists
翻訳と辞書 辞書検索 [ 開発暫定版 ]
スポンサード リンク

indium gallium phosphide : ウィキペディア英語版
indium gallium phosphide
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium (AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors.
Indium gallium phosphide is an alloy of indium phosphide and gallium phosphide.
Ga0.5In0.5P is an alloy of special importance, which is almost lattice matched to GaAs. This allows, in combination with (AlxGa1-x)0.5In0.5, the growth of lattice matched quantum wells for red emitting semiconductor lasers, e.g. red emitting (650nm) RCLEDs or VCSELs for PMMA plastic optical fibers.
Ga0.5In0.5P is used as the high energy junction on double and triple junction photovoltaic cells grown on GaAs. Recent years have shown GaInP/GaAs tandem solar cells with AM0 (sunlight incidence in space=1.35 kW/m2) efficiencies in excess of 25%.〔http://www.cam.uh.edu/MQW%20tech%202p.php〕
A different alloy of GaInP, lattice matched to the underlying GaInAs, is utilized as the high energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells.
Growth of GaInP by epitaxy can be complicated by the tendency of GaInP to grow as an ordered material, rather than a truly random alloy. This changes the bandgap and the electronic and optical properties of the material.
==See also==

* Gallium phosphide
* Indium(III) phosphide
* Indium gallium nitride
* Indium gallium arsenide
* GaInP/GaAs solar cell

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
ウィキペディアで「indium gallium phosphide」の詳細全文を読む



スポンサード リンク
翻訳と辞書 : 翻訳のためのインターネットリソース

Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.